Optical and Interface-Based Methods of Defect Engineering in Silicon
Kondratenko, Yevgeniy Vladimirovich
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/82429
Description
Title
Optical and Interface-Based Methods of Defect Engineering in Silicon
Author(s)
Kondratenko, Yevgeniy Vladimirovich
Issue Date
2009
Doctoral Committee Chair(s)
Seebauer, Edmund G.
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
"Ion implantation is widely used in the microelectronics industry for fabrication of source and drain transistor regions. Unfortunately, implantation causes considerable damage to the substrate lattice rendering most of the implanted dopant electrically inactive. Rapid thermal annealing (RTA) heals the damage by rapidly heating the substrate with a high-power light source. This work uses experiments and continuum-based modeling to develop a scientific understanding of how illumination and the state of the Si-SiO 2 interface affect diffusion of defects during annealing. The optical method elucidates the origin of a nonthermal influence of illumination on boron diffusion. The results show that photostimulated changes in diffusion stem primarily from light interacting with interstitial clusters as they dissociate rather than point defect-mediated changes to steady-state diffusion. An additional mechanism of photostimulated diffusion has been discovered: light interacting with electrically active defects at the Si-SiO2 interface causes variations in the electrostatic field. This interface-based method serves as a scientific foundation for controlling diffusion of silicon interstitials through the Si-SiO2 interface using argon ion bombardment. The results show that the disrupted interface causes ""uphill"" diffusion by increasing interstitial absorption at the interface."
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
