Advanced Methods for Defect Engineering in Silicon
Kwok, Tsz Mei
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https://hdl.handle.net/2142/82411
Description
Title
Advanced Methods for Defect Engineering in Silicon
Author(s)
Kwok, Tsz Mei
Issue Date
2007
Doctoral Committee Chair(s)
Seebauer, Edmund G.
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Language
eng
Abstract
The work seeks to study the effects of two newly discovered defect engineering mechanisms: the use of surface chemistry and optical stimulation on boron diffusion and activation during thermal annealing for ultrashallow junction formation. The work has a strong focus on the use of mathematical modeling to better understand the mechanism of boron diffusion, and utilizes rigorous system-based methods including parameter sensitivity analysis and maximum a posteriori (MAP) estimation to refine model parameters.
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