Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication
Agarwal, Ankur
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https://hdl.handle.net/2142/82404
Description
Title
Controlling Activation Energy to Wafers and Walls in Plasma Processing Reactors for Microelectronics Fabrication
Author(s)
Agarwal, Ankur
Issue Date
2007
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Wafer-to-wafer reproducibility during plasma etching presents another challenge. The use of low-pressure, high-density discharges results in increasing buildup of etch products in the plasma reactor resulting in increased interactions of etch products with wafer and non-wafer surfaces, alike. Consequences of such interactions have been investigated for Ar/Cl2 inductively-coupled plasma etching of poly-Si. The interactions of etch products with the wafer ultimately results in decrease in etch rates while the chamber seasons due to interactions with the non-wafer surfaces. A proportional controller using bias voltage as an actuator and etch rate as the sensor was implemented to achieve real-time, closed-loop control of etch rate to counter the effects of seasoning.
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