Effect of Additives and Substrate Resistance on Shape Evolution During Electrodeposition: Nucleation, Growth and Trench Infill for Copper Interconnects
Qin, Yan
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https://hdl.handle.net/2142/82385
Description
Title
Effect of Additives and Substrate Resistance on Shape Evolution During Electrodeposition: Nucleation, Growth and Trench Infill for Copper Interconnects
Author(s)
Qin, Yan
Issue Date
2006
Doctoral Committee Chair(s)
Alkire, Richard C.
Department of Study
Chemical and Biomolecular Engineering
Discipline
Chemical and Biomolecular Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Language
eng
Abstract
Cu nucleation and growth on resistive thin gold and ruthenium films was carried out in a electrochemical cell. A current pulse technique was found to produce a higher nucleation density that served to reduce the terminal effect and to result in more uniform deposit thickness and coalesce more rapid across the entire resistive strip. The best results were obtained with high PEG/C1- and low SPS concentration, and with a current pulse regime of 40 mA/cm2 for 0.1 s and -0.0006 A for 1 s. The current pulse technique could also produce denser nuclei number at the location near the far end of Ru films than the steady galvanostatic deposition.
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