Extraordinary Temperature Amplification in Ion-Stimulated Surface Diffusion
Wang, Zhengguang
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https://hdl.handle.net/2142/82361
Description
Title
Extraordinary Temperature Amplification in Ion-Stimulated Surface Diffusion
Author(s)
Wang, Zhengguang
Issue Date
2003
Doctoral Committee Chair(s)
Seebauer, Edmund G.
Department of Study
Chemical and Biomolecular Engineering
Discipline
Chemical and Biomolecular Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Language
eng
Abstract
Molecular Dynamic simulation of low-energy noble gas atoms impacting semiconductor surfaces revealed a new, unexpectedly strong tradeoff between the energy threshold for point defect formation and substrate temperature. Experimental measurements of Ge and In surface diffusion on Si(111) by optical second harmonic microscopy (SHM) confirmed major aspects of the predicted temperature amplification. The work may offer a new means for selecting specific rate processes in application such as plasma processing or ion beam assist deposition.
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