Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon
Gunawan, Rudiyanto
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https://hdl.handle.net/2142/82354
Description
Title
Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon
Author(s)
Gunawan, Rudiyanto
Issue Date
2003
Doctoral Committee Chair(s)
Braatz, Richard D.
Seebauer, Edmund G.
Department of Study
Chemical Engineering
Discipline
Chemical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Chemical
Language
eng
Abstract
Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control instrumentation and strategies for these processes.
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