Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices
Wordelman, Carl John
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/81366
Description
Title
Three-Dimensional Granular Monte Carlo Simulation of Semiconductor Devices
Author(s)
Wordelman, Carl John
Issue Date
2000
Doctoral Committee Chair(s)
U. Ravaioli
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Applied Mechanics
Language
eng
Abstract
The combined P3M-EMC method is tested for large and short channel-length silicon MOSFETs and results are compared with continuum simulations in 2D and 3D. The results indicate that classical short-range Coulomb methods such as the P3M-EMC method can match bulk mobilities and kinietic energies predicted by the modified Hartree model. Results predict cooler hot carrier tails than do methods that use c-i scattering rates and do not consider c-c interaction. Finally, timing analysis shows that the classical molecular-dynamical methods like the P3M-EMC method can simulate very-small devices with modest additional cost compared to the traditional Monte Carlo device simulation method, and such methods will likely continue to be useful ways to model ultrasmall semiconductor devices.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
