High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
Tang, Zhuang
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https://hdl.handle.net/2142/81360
Description
Title
High-Speed Indium Gallium Phosphide/indium Gallium Arsenide/indium Phosphide Doped-Channel HFETs and Implanted Gallium Arsenide Enchancement/depletion-Mode MESFETs Technology With an f(T) Over 130 GHz
Author(s)
Tang, Zhuang
Issue Date
2000
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Direct ion-implanted GaAs MESFET has become the primary workhorse for high-speed and millimeter-wave wireless applications due to its high performance-cost ratio. A simple low-temperature T-gate process using a novel implantation schedule for high-performance direct ion-implanted GaAs enhancement/depletion-mode MESFETs was demonstrated. The 0.12-mum gate-length D-mode MESFET shows an fT of 136 GHz and fmax of 200 GHz. With the same implantation schedule, we also fabricated, for the first time, the E-mode MESFET exhibiting fT of 120 GHz and fmax of 166 GHz.
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