Growth and Design of High-Performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low -Pressure Metalorganic Chemical Vapor Deposition
Hartmann, Quesnell Jacob
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https://hdl.handle.net/2142/81328
Description
Title
Growth and Design of High-Performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low -Pressure Metalorganic Chemical Vapor Deposition
Author(s)
Hartmann, Quesnell Jacob
Issue Date
1998
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Although device physics and semiconductor theory were an essential part of this research, few new theoretical calculations or predictions were made. Rather, this thesis relied heavily on the work of those, who early in the history of semiconductors, developed the theories of minority carrier injection, heterojunction effects, bandgap engineering, and carbon-doping. The work described here is mostly an exercise in applying these theories to produce a manufacturable, high-performance transistor capable of meeting the demands of modern electronics.
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