Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar
Shimon, Robert Leon
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https://hdl.handle.net/2142/81325
Description
Title
Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar
Author(s)
Shimon, Robert Leon
Issue Date
2000
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies.
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