Optical Characterization of Defects and Impurities in Gallium Nitride
Reuter, Erik Earl
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https://hdl.handle.net/2142/81313
Description
Title
Optical Characterization of Defects and Impurities in Gallium Nitride
Author(s)
Reuter, Erik Earl
Issue Date
1999
Doctoral Committee Chair(s)
Stephen G. Bishop
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material.
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