Predicting CMOS Hot Carrier Degradation in VLSI Circuits
Li, Erhong
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https://hdl.handle.net/2142/81309
Description
Title
Predicting CMOS Hot Carrier Degradation in VLSI Circuits
Author(s)
Li, Erhong
Issue Date
1999
Doctoral Committee Chair(s)
Rosenbaum, Elyse
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Reliability simulation of a 51-stage ring-oscillator was performed. The circuit lifetime improvement due to D2 anneal can be well estimated by the device dc lifetime improvement data.
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