Physical and Electrical Properties of Hot -Carrier Degradation of Silicon *Mos Transistors Processed in Deuterium and Hydrogen
Chen, Zhi
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https://hdl.handle.net/2142/81304
Description
Title
Physical and Electrical Properties of Hot -Carrier Degradation of Silicon *Mos Transistors Processed in Deuterium and Hydrogen
Author(s)
Chen, Zhi
Issue Date
1999
Doctoral Committee Chair(s)
Lyding, Joseph W.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
"An extensive experimental investigation has been carried out to study the benefits of the deuterium annealing of MOS transistors to achieve hot-carrier lifetime improvement. Deuterium processing as a function of the process parameters such as temperature, time, and pressure for MOS transistors with one level and multilevels of metalization has been studied. Lifetime improvements of 10--80 times have been demonstrated for chips with one level and multilevels of metalization. Therefore, it is feasible to use deuterium to replace hydrogen in manufacturing integrated circuits with sophisticated multiple levels of interconnection. The classical concept and theory suggest that the degradation of MOS transistors is caused by interface trap generation resulting from ""hot-carrier injection."" New experiments for the deuterium isotope effect for hot-hole and hot-electron injection have been performed to probe the mechanism for the interface trap generation in n-MOS transistors in the presence of hot-hole and hot-electron injection. It is shown that channel hot electrons, not carriers injected into the gate oxide, are primarily responsible for interface trap generation for standard hot-carrier stressing. It is also shown that the origin of the deuterium isotope effect is due to multiple vibrational excitation of the Si-H/D bonds. The de-excitation or quenching process is mass dependent. The new mechanism is used to analyze the hot-carrier degradation characteristics of MOS transistors."
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