Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors
Yang, Qinghong (Jack)
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https://hdl.handle.net/2142/81300
Description
Title
Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors
Author(s)
Yang, Qinghong (Jack)
Issue Date
1999
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The impact of the emitter and cap growth conditions on the gain of heterojunction bipolar transistors (HBTs) was studied by annealing to simulate the prolonged growth of HBTs with a heavily carbon-doped base. The results indicate that postgrowth annealing at a temperature close to the growth temperature of the device causes both hydrogen removal from the base and carbon-related defect formation. This effect is caused by the amount of thermal stress applied to the device by either prolonging the anneal or going to a higher temperature. The findings from the annealing study were applied to varying the emitter and cap growth conditions. Data above shows that reducing the cap growth time or temperature can improve the gain of an HBT. Reducing the cap growth temperature is a more efficient way to minimize the self-annealing effect on the base.
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