InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
Kuo, Hao-Chung
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https://hdl.handle.net/2142/81294
Description
Title
InP/InGaAs Heterojunction Bipolar Transistors and Field-Effect Transistors Grown by Gas -Source Molecular Beam Epitaxy
Author(s)
Kuo, Hao-Chung
Issue Date
1999
Doctoral Committee Chair(s)
Stillman, G.E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Finally, the thermal degradation of heavily C-doped InGaAs and its effects on dc properties of InGaAs/InP HBTs have been studied. The degradation of the junction properties and current gain-base sheet resistance ratio can be attributed to the formation of C precipitates. These findings are important for improving the reliability of C-doped InP/InGaAs HBTs. (Abstract shortened by UMI.).
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