Photoelectrochemical Wet Etching of Gallium Nitride
Youtsey, Christopher Thomas
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https://hdl.handle.net/2142/81289
Description
Title
Photoelectrochemical Wet Etching of Gallium Nitride
Author(s)
Youtsey, Christopher Thomas
Issue Date
1999
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Chemistry, Inorganic
Language
eng
Abstract
In this work, the technique of photoelectrochemical wet etching using KOH solutions has been developed for n-type GaN materials. Customized hardware and software have been assembled to carry out the etching. The etching characteristics were characterized over a wide range of process conditions. This work has led to a viable wet etching technology for GaN device fabrication. In addition, the etching technique is useful for material characterization and measuring dislocation densities in n-type GaN thin films.
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