Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Wierer, Jonathan Joseph, Jr
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https://hdl.handle.net/2142/81288
Description
Title
Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Author(s)
Wierer, Jonathan Joseph, Jr
Issue Date
1999
Doctoral Committee Chair(s)
Holonyak, Nick, Jr.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical characteristics and provide a means to create thin highly defined cavities in semiconductor light-emitting structures.
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