Increasing the Critical Thickness of InGaAs Quantum Wells Using Strain-Relief Technologies
Jones, Andrew Marquis
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https://hdl.handle.net/2142/81282
Description
Title
Increasing the Critical Thickness of InGaAs Quantum Wells Using Strain-Relief Technologies
Author(s)
Jones, Andrew Marquis
Issue Date
1999
Doctoral Committee Chair(s)
Coleman, James J.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Compliant membranes enable strain relief by depositing on an ultra-thin semiconductor base. Unlike growth on typical thick substrates, expansion of the compliant membrane during strained-layer regrowth allows the membrane to accommodate most of the strain energy. Ternary InGaAs compliant films supported above a GaAs substrate with single AlGaAs pedestals have been utilized to fabricate long-wavelength (1.35 mum) InGaAs quantum wells on a GaAs substrate.
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