Circuit-Level Modeling and Simulation of Semiconductor Lasers
Mena, Pablo Valente
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https://hdl.handle.net/2142/81270
Description
Title
Circuit-Level Modeling and Simulation of Semiconductor Lasers
Author(s)
Mena, Pablo Valente
Issue Date
1998
Doctoral Committee Chair(s)
Sung-Mo Kang
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
We then present circuit-level models for vertical-cavity surface-emitting lasers (VCSELs) and their strong thermally and spatially dependent behavior. The first approach, implemented in both HSPICE and SABER, is a simple thermal model which incorporates a temperature-dependent offset current into the standard laser rate equations in order to describe thermally dependent threshold current and output-power rollover in the LI characteristics. The second model is a comprehensive circuit level model in SABER which uses analytical temperature dependencies and spatially independent rate equations to describe a VCSEI's thermal and spatial behavior. In addition to simulating thermal LI characteristics, this latter model can also be used to simulate multimode competition, temperature-dependent modulation responses, and diffusive transients in the time domain. After presenting the theory and implementation of our VCSEL models, we compare simulated and experimental data for various devices reported in the literature. Despite some important modeling and characterization issues, the data compare favorably.
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