A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems
Hoekstra, Robert John
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https://hdl.handle.net/2142/81266
Description
Title
A Model of Energy and Angular Distributions of Fluxes to the Substrate and Resulting Surface Topology for Plasma Etching Systems
Author(s)
Hoekstra, Robert John
Issue Date
1998
Doctoral Committee Chair(s)
Kushner, Mark J.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Fluid and Plasma
Language
eng
Abstract
"An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, ""microtrench"" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed ""cradle-to-grave"" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes."
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