Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography
Abeln, Glenn Charles
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https://hdl.handle.net/2142/81257
Description
Title
Fabrication of Metal and Organic Nanostructures on Silicon(100) With Scanning Tunneling Microscope-Based Lithography
Author(s)
Abeln, Glenn Charles
Issue Date
1998
Doctoral Committee Chair(s)
Lyding, Joseph W.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
"The scanning tunneling microscope (STM) has been employed for both atomic-scale characterization and modification of surfaces. The STM, for example, can be used to desorb hydrogen or deuterium from nanometer-sized regions of the H-passivated or D-passivated Si(100)-2 x 1 surface, resulting in nanometer-sized ""templates"" which can then be reacted with various chemical species. Previous work has demonstrated selective oxidation and nitridation of STM- patterned areas by exposing the patterned surface to O2 and NH3, respectively. Here, this technique is applied to the fabrication of organic and metal-containing nanostructures on the Si(100) surface. Norbornadiene, an olefinic organic molecule, is shown to react selectively with STM-depassivated areas to form nanometer-sized regions with a norbornadiene adlayer. Metal CVD (chemical vapor deposition) precursor molecules are also shown to react selectively with STM-depassivated areas. The reaction of such areas with an Al CVD precursor and with a CVD nucleation promoter (TiCl4) is discussed, and preliminary results with other metal precursor molecules are described."
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