Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces
Curtis, Anthony Paul
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https://hdl.handle.net/2142/81239
Description
Title
Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces
Author(s)
Curtis, Anthony Paul
Issue Date
1998
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established results on unoxidized material interfaces.
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