Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Thomas, Sunil
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https://hdl.handle.net/2142/81232
Description
Title
Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy
Author(s)
Thomas, Sunil
Issue Date
1998
Doctoral Committee Chair(s)
Stillman, Gregory E.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for f$\sb{\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed.
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