Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Moy, Aaron M.
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https://hdl.handle.net/2142/81217
Description
Title
Fabrication of Gallium Indium Arsenide Phosphide Quantum Wire Heterostructures for Optoelectronic Applications
Author(s)
Moy, Aaron M.
Issue Date
1997
Doctoral Committee Chair(s)
Cheng, K.Y.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Thermal annealing techniques were also applied to QWRs. After this treatment, emissions were found to be at a higher energy than the as-grown samples, attributed to the disordering of the lateral composition modulation which, in effect, raised the bandgap energy of the QWR material. In addition, annealing was also found to reduce the magnitude but maintain the direction of a red-shift in emission wavelength with cooling measurement temperature. This thermal treatment served to be a useful tool in engineering the emission wavelength from a QWR sample from 1.6 to 1.55 mm.
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