The Development of High-Frequency Gallium Arsenide MESFET and Integrated Circuit Technology
Middleton, Jeremy Richard
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/81216
Description
Title
The Development of High-Frequency Gallium Arsenide MESFET and Integrated Circuit Technology
Author(s)
Middleton, Jeremy Richard
Issue Date
1997
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Speed and gain measurements are presented for discrete devices and integrated circuits. In addition, the use of the established process to produce the first high-frequency GaAs MOSFET is presented.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
