Electrothermal Simulation and Temperature-Sensitive Reliability Diagnosis for CMOS VLSI Circuits
Cheng, Yi-Kan
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https://hdl.handle.net/2142/81203
Description
Title
Electrothermal Simulation and Temperature-Sensitive Reliability Diagnosis for CMOS VLSI Circuits
Author(s)
Cheng, Yi-Kan
Issue Date
1997
Doctoral Committee Chair(s)
Kang, Sung-Mo (Steve)
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
ILLIADS-T has been successfully applied to the electromigration (EM) reliability diagnosis and timing analysis. By considering both transistor and interconnect temperatures, the temperature-sensitive EM-induced mean time-to-failure and critical path timing are estimated and discussed.
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