Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications
Arafa, Mohamed A.
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https://hdl.handle.net/2142/81198
Description
Title
Silicon/silicon-Germanium Modulation-Doped Field-Effect Transistors for Complementary Circuit Applications
Author(s)
Arafa, Mohamed A.
Issue Date
1997
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
In this work, the fabrication and characteristics of p-type and n-type MODFETs on a relaxed-SiGe buffer was investigated. Record-performance was achieved for the p-type MODFETs. The fabrication of enhancement-mode n-type MODFETs with three different capping layer configurations was also investigated. A novel super-self-aligned process for the fabrication of enhancement-mode MODFETs on uncapped, depleted heterostructures with ion-implanted source and drain was developed.
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