High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications

Wohlmuth, Walter Anthony

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https://hdl.handle.net/2142/81195 Copy

Description

Title

High-Speed and High-Sensitivity Metal-Semiconductor-Metal Photodetectors for Optoelectronic Integrated Circuit Applications

Author(s)

Wohlmuth, Walter Anthony

Issue Date

1997

Doctoral Committee Chair(s)

I. Adesida

Department of Study

Electrical Engineering

Discipline

Electrical Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Electronics and Electrical

Language

eng

Abstract

A variety of techniques to enhance the sensitivity and bandwidth of front-illuminated MSMPDs is presented, proposed, and demonstrated. A reduction in the absorption layer thickness of a conventional InGaAs-based MSMPD enabled bandwidths in excess of 19 GHz, at a wavelength of 1.55 $\mu$m, to be obtained with the use of simple optical lithography tools. MSMPDs using an InGaAs absorption layer, employing a conventional layout, and utilizing transparent electrode materials composed of combinations of $\rm In\sb2O\sb3,$ CdO, and SnO$\sb2$ achieved responsivities of up to 0.69 A/W at a wavelength of 1.3 $\mu$m. Modifications to the layout of the conventional MSMPD enabled enormous reductions in dark current to be obtained. These modifications afford a reduction in dark current by reducing thermionic emission processes at the Schottky contacts of the MSMPDs. An MSMPD exhibiting 52.9 pA of dark current corresponding to a dark current density of 21.1 fA/$\rm\mu m\sp2$ was demonstrated.

Graduation Semester

1997

Type of Resource

text

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http://hdl.handle.net/2142/81195

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