Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP
Liu, Paul
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https://hdl.handle.net/2142/81192
Description
Title
Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP
Author(s)
Liu, Paul
Issue Date
1997
Doctoral Committee Chair(s)
Hsieh, Kuang-Chien
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\rm In\sb{0.3}Ga\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed.
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