Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
Grundbacher, Ronald Waldo
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https://hdl.handle.net/2142/81181
Description
Title
Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
Author(s)
Grundbacher, Ronald Waldo
Issue Date
1997
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts.
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