Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices
Fang, Wei-Chiao William
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https://hdl.handle.net/2142/81176
Description
Title
Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices
Author(s)
Fang, Wei-Chiao William
Issue Date
1997
Doctoral Committee Chair(s)
Chuang, Shun-Lien
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Optics
Language
eng
Abstract
The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s.
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