Selective Oxidation of Aluminum-Bearing Iii-V Semiconductors: Properties and Applications to Small-Volume Quantum Well Heterostructure Lasers
Ries, Michael John
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https://hdl.handle.net/2142/81167
Description
Title
Selective Oxidation of Aluminum-Bearing Iii-V Semiconductors: Properties and Applications to Small-Volume Quantum Well Heterostructure Lasers
Author(s)
Ries, Michael John
Issue Date
1996
Doctoral Committee Chair(s)
Holonyak, Nick, Jr.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
"The same IILD + oxidation process is used to fabricate a two-dimensional active photonic lattice that is comprised of $\sim$9-$\mu$m microdisk lasers that are arranged in a triangular (hexagonal close-packed) lattice arrangement. The disks are closely spaced (11-$\mu$m center-to-center spacing) such that they are strongly coupled. As a result of the coupling of the disks, the photonic lattice exhibits laser operation in bands of energy located around the microdisk modes. In addition, the photonic lattice emits beams of energy along six symmetrical ""crystal"" directions. The details of photonic lattice fabrication and characterization are described."
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