Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)

Ofuonye, Benedict Chukwuka

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Description

Title

Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts)

Author(s)

Ofuonye, Benedict Chukwuka

Issue Date

2009

Doctoral Committee Chair(s)

Adesida, Ilesanmi

Department of Study

Electrical and Computer Engineering

Discipline

Electrical and Computer Engineering

Degree Granting Institution

University of Illinois at Urbana-Champaign

Degree Name

Ph.D.

Degree Level

Dissertation

Keyword(s)

Engineering, Electronics and Electrical

Language

eng

Abstract

The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations.

Graduation Semester

2009

Type of Resource

text

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http://hdl.handle.net/2142/81156

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