Modeling, Characterization, and Design of Silicon Controlled Rectifiers for Electrostatic Discharge Protection Circuits
Di Sarro, James Paul
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/81154
Description
Title
Modeling, Characterization, and Design of Silicon Controlled Rectifiers for Electrostatic Discharge Protection Circuits
Author(s)
Di Sarro, James Paul
Issue Date
2009
Doctoral Committee Chair(s)
Rosenbaum, Elyse
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
This dissertation focuses on the characterization, modeling, and design of silicon controlled rectifiers (SCRs) for electrostatic discharge (ESD) protection applications. The oscillatory transmission line pulse (oTLP) measurement is introduced in this work. oTLP measurements enable indirect observation of a device's charge storage duration. When applied to SCRs, this measurement illustrates that trigger voltage is a function of the past state of the device and can be reduced from its quasi-static value by stored charge. Motivated by the device behavior observed with oTLP measurements, a detailed investigation of the SCR's turn-off process is conducted with transmission line pulse (TLP) measurements and device simulations. This investigation reveals that the duration of the turn-off period is a function of well tap connection and well tap spacing. A scalable SCR compact model is developed and implemented in Verilog-A. This model captures the transient effects critical for ESD simulations and the effect of layout spacings on SCR characteristics. The model is extracted and verified in 90 nm and 130 nm technologies. A new dual-base triggered SCR design is presented. This design is shown to have low off-state leakage current, an easily adjustable trigger voltage, and increased immunity to mistriggering.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.