Methodologies for Broadband Electromagnetic Modeling of on-Chip Semiconductor Substrate Noise
Manetas, George
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https://hdl.handle.net/2142/81144
Description
Title
Methodologies for Broadband Electromagnetic Modeling of on-Chip Semiconductor Substrate Noise
Author(s)
Manetas, George
Issue Date
2009
Doctoral Committee Chair(s)
Cangellaris, Andreas C.
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
For a full-wave modeling of the substrate coupling problem the thesis elaborates on a number of features for the time domain finite integration technique (FIT), a volumetric discretization scheme, aimed at improving its computational performance for the type of geometrical characteristics encountered in substrate coupling problems on-chip. Along these lines, the implicit Newmark-beta scheme is proposed as the time-marching scheme to overcome the severe restrictions on the maximum stable time step imposed by stability constraints to the more frequently used explicit leapfrog scheme. Furthermore, a previously proposed FDTD subgridding scheme, based on a finite element method (FEM) formalism, has been reformulated and adapted to work within the FIT framework. One important element of the presented subgridding scheme is that it maintains the transpose property between the discrete curl operators for electric and magnetic fields. This is a key ingredient for the implementation of a global discrete system that is energy conserving, consistent with the modeled continuous problem; hence any subgridding induced, late time instabilities are avoided.
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