Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Basu, Anirban
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https://hdl.handle.net/2142/81123
Description
Title
Advanced Processing Techniques for Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors
Author(s)
Basu, Anirban
Issue Date
2009
Doctoral Committee Chair(s)
Adesida, Ilesanmi
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Using all the processing advancements demonstrated through the research undertaken in this dissertation highlights the potential of GaN-based transistors for next generation millimeter-wave applications, and possibly digital applications.
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