Process Development and Device Characteristics of Aluminum Gallium Nitride/gallium Nitride HEMTs for High Frequency Applications
Kim, Dong Hyun
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https://hdl.handle.net/2142/81077
Description
Title
Process Development and Device Characteristics of Aluminum Gallium Nitride/gallium Nitride HEMTs for High Frequency Applications
Author(s)
Kim, Dong Hyun
Issue Date
2008
Doctoral Committee Chair(s)
Adesida, Ilesanmi
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Finally, a novel SiN/ALD Al2O3/SiN dielectric trilayer T-gate formation process was developed for nanometer-scale (∼50 nm) recessed T-gate devices. Using a novel isotropic dry etching method, the top SiN layer was selectively removed without affecting the bottom dielectric stack. The devices showed a maximum fT of 127 GHz, fmax of 163 GHz at the drain-to-source bias (Vds) of 4 V. An fmax of 190 GHz and fT of 105 GHz were attained at Vds of 10 V.
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