Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters
Chen, Kuo-Feng
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https://hdl.handle.net/2142/81075
Description
Title
Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters
Author(s)
Chen, Kuo-Feng
Issue Date
2008
Doctoral Committee Chair(s)
J. Gary Eden
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in voltage investigated. This simulation, in tandem with the measured sheath potential, provides a new probeless method to determine the electron density at the sheath edge.
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