Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
Chen, Guang
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https://hdl.handle.net/2142/81074
Description
Title
Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization
Author(s)
Chen, Guang
Issue Date
2008
Doctoral Committee Chair(s)
Adesida, Ilesanmi
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods.
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