Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs
Lanford, William B.
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/80978
Description
Title
Process Development for Aluminum Gallium Nitride-Based Enhancement- and Depletion -Mode HEMTs
Author(s)
Lanford, William B.
Issue Date
2006
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical and Computer Engineering
Discipline
Electrical and Computer Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
This dissertation documents the development of high-performance gate-recessed HEMTs in the AlGaN-GaN material system. The primary goal of the dissertation research is the development of processes that are suitable for fabrication of AlGaN/GaN HEMTs with precise threshold voltage control for both enhancement- and depletion-mode operation. The specific areas of research include controllable and low-damage gate-recess etching, damage-removing annealing processes, and metal structures for Schottky gate contacts. Both E-HEMTs and D-HEMTs are made in order to study the effect of recess etching, post-etch annealing, and post gate annealing processes on device characteristics.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
