Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Zhang, Zhenhua
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https://hdl.handle.net/2142/80951
Description
Title
Indium Phosphide Based Indium Arsenide Quantum Dot Infrared Photodetectors
Author(s)
Zhang, Zhenhua
Issue Date
2005
Doctoral Committee Chair(s)
Cheng, K.Y.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Based on the developed QD growth techniques, photoconductive InAs/InAlGaAs/InP QDIPs grown on InP by MBE technique were presented. These devices demonstrated responses to normal incident photoexcitations in the 5-18-mum range. The QDIP device based on bound-to-bound transitions shows a peak responsivity of 113 mA/W and a detectivity of 1.8 x 10 9 cmHz1/2/W at 10 K for a 10-period QD heterostructure. The device based on bound-to-continuum transitions demonstrates an improved dark current characteristics and a better detectivity of 2.1 x 10 9 cmHz1/2/W.
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