Detecting DNA Using Silicon Nanopores and 20--40 Nm Gate-Length RFNMOSFET
Heng, Jiunn Benjamin
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https://hdl.handle.net/2142/80924
Description
Title
Detecting DNA Using Silicon Nanopores and 20--40 Nm Gate-Length RFNMOSFET
Author(s)
Heng, Jiunn Benjamin
Issue Date
2005
Doctoral Committee Chair(s)
Gregory Timp
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Lastly, we describe using a nanopore in a MOS-capacitor membrane to sense the charge in DNA. As DNA translocates the nanopore, the electrostatic charge distribution should polarize the capacitor and induce a voltage on the electrodes, which will be measured by our nanotransistors implemented right next to them. Silicon nanofabrication and MD simulations are technological linchpins in the development of this detector.
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