High-Speed Silicon-Germanium BiCMOS and Indium Phosphide DHBT Receiver ICs for Optical and Wireless Communications
He, Qiurong
This item is only available for download by members of the University of Illinois community. Students, faculty, and staff at the U of I may log in with your NetID and password to view the item. If you are trying to access an Illinois-restricted dissertation or thesis, you can request a copy through your library's Inter-Library Loan office or purchase a copy directly from ProQuest.
Permalink
https://hdl.handle.net/2142/80923
Description
Title
High-Speed Silicon-Germanium BiCMOS and Indium Phosphide DHBT Receiver ICs for Optical and Wireless Communications
Author(s)
He, Qiurong
Issue Date
2005
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Finally, three different types of active inductors and their applications to VCOs (AIVCOs) and low-pass filters were designed and fabricated with the SiGe and InP processes. The InP AIVCOs demonstrate 20-GHz oscillation frequency and over 50% tuning range. The measured do power for a single InP active inductor is only 15 mW from a 4-V power supply.
Use this login method if you
don't
have an
@illinois.edu
email address.
(Oops, I do have one)
IDEALS migrated to a new platform on June 23, 2022. If you created
your account prior to this date, you will have to reset your password
using the forgot-password link below.
