Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
Chan, Richard T.
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https://hdl.handle.net/2142/80917
Description
Title
Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
Author(s)
Chan, Richard T.
Issue Date
2005
Doctoral Committee Chair(s)
Feng, Milton
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Further material structure modification leads to the laser operation (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The shift in HBT laser operation from spontaneous to stimulated emission is manifest as a distinct change in the HBT current-voltage characteristics, specifically a decrease in the common-emitter current gain (betadc = IC/IB) and the occurrence of even a more striking peak in the small signal (ac) gain betaac = DeltaIC/DeltaIB. Using a larger QW width to enhance the radiative recombination process, direct three-port modulation of a transistor laser at 13.5 GHz is demonstrated using a device with a 4 x 340 mum2 emitter operating at 243 K.
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