Photodetection in Silicon Pyramidal Microdischarges
Ostrom, Nels Patrick
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https://hdl.handle.net/2142/80882
Description
Title
Photodetection in Silicon Pyramidal Microdischarges
Author(s)
Ostrom, Nels Patrick
Issue Date
2004
Doctoral Committee Chair(s)
J. Gary Eden
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
Photodetection in a silicon pyramidal microdischarge device has been observed. This hybrid plasma/semiconductor device was fabricated from standard silicon wafers using common integrated circuit, microfabrication techniques. The response of the devices to a 780-nm laser diode was shown to have an absolute photosensitivity of greater than 3.5 A/W. The absolute spectral response of the active plasma devices closely resembles the response of other silicon devices. The 100 x 100 mum devices exhibited a peak response of ∼2.0 A/W at 850 nm while the 50 x 50 mum devices showed a response of ∼3.6 A/W at 900 nm. Frequency response of the device was measured at >500 MHz using a 7--10 ns pulse from a 532-nm Nd:YAG laser. The results of the experiments culminated in the development of an explanation of the photodetection mechanism. The silicon electrode acts as a photocathode and converts incoming photons into electrons, which then undergo a multiplication in the plasma. The electron multiplication, measured during experiments, is greater than 3.
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