Ohmic Contacts to N -Type Gallium Nitride Based Semiconductors
Selvanathan, Deepak
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https://hdl.handle.net/2142/80864
Description
Title
Ohmic Contacts to N -Type Gallium Nitride Based Semiconductors
Author(s)
Selvanathan, Deepak
Issue Date
2004
Doctoral Committee Chair(s)
Adesida, Ilesanmi
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
In this work, the development and characterization of electrical and materials performance of ohmic contacts are presented. Surface treatment techniques were developed to improve the electrical characteristics of ohmic contacts. Ti/Al/Mo/Au metallization scheme was developed to form ohmic contacts to n-GaN, n-AlxGa1-xN, and AlGaN/GaN HEMTs. Materials microstructural analysis techniques were used to understand the evolution of electrical behavior of these contacts at higher temperatures.
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