A Critical Study of Gallium Nitride-Based Digital Technology
Park, Chul-Woo
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https://hdl.handle.net/2142/80863
Description
Title
A Critical Study of Gallium Nitride-Based Digital Technology
Author(s)
Park, Chul-Woo
Issue Date
2004
Doctoral Committee Chair(s)
Kim, Kyekyoon
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Physics, Condensed Matter
Language
eng
Abstract
A careful physical design, namely, layout, can convert the design into tangible devices without fabrication problems. The horseshoe-shaped gate and the design rule of thumb were proposed in the physical design and two mask sets were fabricated. Keys to the fabrication of GaN BGJFETs may be the device-quality material and the stable fabrication technology as well as the masks. The difficulties and achievements in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The p-GaN films were grown in Ga-rich regime in order to obtain excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was adopted to minimize plasma-induced etch damage. Ohmic contact issues for n-GaN and p-GaN were also discussed. Finally, the test results of the preliminary BGJFETs were discussed with the future expectations and recommendations.
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