Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development
Kuliev, Almaz S.
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https://hdl.handle.net/2142/80859
Description
Title
Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development
Author(s)
Kuliev, Almaz S.
Issue Date
2004
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
In this work, the development of fabrication process and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between microwave and DC characteristics as the key design parameter is varied. The knowledge of this trade-off is crucial in the design of AlGaN/GaN HEMTS. Dependence of DC, microwave and large signal performance on design parameters is presented so that the trade-off between DC and microwave characteristics can be established, which will facilitate the optimization of AlGaN/GaN HEMT design for high-power applications. This work contributes to the developmental research in the field of GaN-based FETs.
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