High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
Khan, Farid Ahmed
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https://hdl.handle.net/2142/80857
Description
Title
High Density Plasma Etching of Wide Bandgap Semiconductor Materials for Fabricating Novel Devices
Author(s)
Khan, Farid Ahmed
Issue Date
2004
Doctoral Committee Chair(s)
I. Adesida
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Electronics and Electrical
Language
eng
Abstract
We also demonstrated the fabrication of recessed 0.15 mum gate-length AlGaN/GaN HEMTs using ICP-RIE on sapphire substrate. These devices exhibited high DC and RF performance. The drain current density as high as 1.31 A/mm, a peak transconductance of 401 mS/mm, an fT of 107 GHz and an f max of 148 GHz were measured on these devices. To the best of the authors' knowledge, this is the highest ever-reported value of gm for AlGaN/GaN HEMTs. Also, an fT of 107 GHz is the highest data for similar gate-length devices.
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