Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application
Chang, Kuo-Lih
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Permalink
https://hdl.handle.net/2142/80851
Description
Title
Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application
Author(s)
Chang, Kuo-Lih
Issue Date
2003
Doctoral Committee Chair(s)
Hsieh, K.C.
Department of Study
Electrical Engineering
Discipline
Electrical Engineering
Degree Granting Institution
University of Illinois at Urbana-Champaign
Degree Name
Ph.D.
Degree Level
Dissertation
Keyword(s)
Engineering, Materials Science
Language
eng
Abstract
Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be processed at high temperatures.
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